IRFP 264

  • Advanced Process Technology
  • Ultra-Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Lead-Free, RoHS Compliant.
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Description

IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W.  The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Additional information
Drain Source Breakdown Voltage

250V

Power Dissipation (Pd)

280W

Operating Temperature Range

-55 °C – 150 °C

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